Mazda and Rohm are working on next-generation semiconductors
Power semiconductors with gallium nitride (GaN) are considered a promising alternative to conventional silicon semiconductors, as they are said to reduce energy loss and enable smaller, more efficient components, according to Mazda and Rohm.
The two companies have been working on inverters with silicon carbide (SiC), another advanced semiconductor technology, since 2022. With the focus on GaN, further progress is now to be made in miniaturisation and efficiency enhancement. The collaboration aims to develop a demonstration model by 2025 and to implement it in production-ready vehicle components by 2027.
Power semiconductors are key components in electric drives, responsible for converting and controlling electrical energy. While silicon (Si) has been the standard for a long time, materials such as silicon carbide (SiC) and gallium nitride (GaN) offer significantly better electrical properties. GaN enables higher switching speeds and works with lower energy losses, which is particularly advantageous for electric vehicles.
“As the shift towards electrification accelerates in pursuit of carbon neutrality, we are delighted to collaborate with ROHM, which aims to create a sustainable mobility society with its outstanding semiconductor technology and advanced system solution capabilities, in the development and production of automotive components for electric vehicles” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda. “We are excited to work together to create a new value chain that directly connects semiconductor devices and cars.”
“ROHM’s EcoGaN™, capable of high-frequency operation, and the control IC that maximizes its performance are key to miniaturization and energy-saving. To implement this in society, collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN,” said Katsumi Azuma, Member of the board and Senior Managing Executive Officer of ROHM.
The announcement by Mazda and Rohm emphasises the partnership’s innovative strength and sustainability, but remains vague with regard to specific technical hurdles and economic challenges. The transition from established silicon to GaN semiconductors involves high development costs and complex production processes. Furthermore, it remains unclear in which vehicle segments Mazda will use the new technology and whether it will be available at realistically calculable costs.
The question of scalability and market readiness also remains unanswered. While Rohm already has experience with GaN components, integrating them into production vehicles is a further step. Mazda must prove that the new technology actually offers a tangible advantage for customers and is not just a marketing tool for sustainable mobility.
In December, Rohm had already signed a partnership with the Taiwanese chipmaker TSMC to develop and mass-produce gallium nitride power elements for electric vehicles.
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