Mitsubishi Electric introduces high-quality SiC-MOSFET bare die
The bare die features proprietary manufacturing technologies, including a gate oxide film process. Mitsubishi Electric says the gate oxide film process helps suppress power loss and on-resistance fluctuations. Thanks to this, the component attenuates power loss by 50 per cent compared to conventional planar. Moreover, the product employs oblique ion implantation, reducing switching loss.
According to Mitsubishi Electric, the MOSFET-based wide bandgap component finds applications in drive-motor inverters of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs) and other electric vehicles. The company hopes to leverage the component to facilitate decarbonisation, extend the driving range and improve the vehicles’ energy efficiency.
The product will be shipped in WF0009Q-1200AA and WF0008Q-0750AA models, which comply with the Restriction of the Use of Certain Hazardous Substances (RoHS) directive.
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