Infineon announces semiconductor technology breakthrough
According to Infineon, the breakthrough will help the company to significantly advance the market for GaN-based power semiconductors. Chip production on 300-millimetre wafers is technologically more advanced and much more efficient than on 200-millimetre wafers, as the larger wafer diameter enables 2.3 times the number of chips per wafer to be produced. Infineon writes that the new production process “enables efficiency performance, smaller size, lighter weight, and lower overall cost. Furthermore, 300 mm manufacturing ensures superior customer supply stability through scalability.”
Infineon also estimates that being able to use its existing 300 mm silicon manufacturing equipment, “since gallium nitride and silicon are very similar in manufacturing processes. Infineon’s existing high-volume silicon 300 mm production lines are ideal to pilot reliable GaN technology, allowing accelerated implementation and efficient use of capital.”
“This remarkable success is the result of our innovative strength and the dedicated work of our global team to demonstrate our position as the innovation leader in GaN and power systems,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market. As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride.”
Infineon recently also opened a new semiconductor production facility in Malaysia, which focuses on silicon carbide converters. The company has also been researching a semiconductor project with GaN since May 2023.
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