Onsemi presents new generation of SiC semiconductors

US semiconductor manufacturer Onsemi has presented its latest generation of silicon carbide technology platforms for use in electric vehicles and other applications. Compared to previous generations, the platform can reduce conduction losses by 30 per cent and switch-off losses by up to 50 per cent.

Image: Onsemi

According to Onsemi, the so-called EliteSiC M3e MOSFETs also offer the industry’s lowest specific on-resistance with short-circuit capability, which is crucial for the traction inverter market. In electric vehicles, inverters convert the direct current from the battery into alternating current for the electric motor(s). The lower the conversion losses and cooling requirements, the greater the range of the vehicle with the same battery size.

A concrete example: Packaged in Onsemi’s power modules, “the 1200V M3e die delivers substantially more phase current than previous EliteSiC technology,” which should lead to a 20 per cent higher output power in the same traction inverter housing. Onsemi also claims that a fixed power stage can now be designed with around 20 per cent less SiC content, which saves costs and enables the development of smaller, lighter, and more reliable systems.

According to the company, the new SiC generation will also enable “the performance and reliability of next-generation electrical systems at lower cost per kW, thus influencing the adoption and effectiveness of electrification initiatives.” With the ability to operate at higher switching frequencies and voltages while minimising power conversion losses, the platform is a wide range of automotive and industrial applications “a wide range of automotive and industrial applications.” In addition to electric drives, these include DC fast chargers, solar inverters and energy storage solutions. It can also be used to make data centres more efficient.

“The future of electrification is dependent on advanced power semiconductors. Today’s infrastructure cannot keep up with the world’s demands for more intelligence and electrified mobility without significant innovations in power. This is critical to the ability to achieve global electrification and stop climate change,” said Simon Keeton, group president, Power Solutions Group, onsemi. “We are setting the pace for innovation, with plans to significantly increase power density in our silicon carbide technology roadmap through 2030 to be able to meet the growing demands for energy and enable the global transition to electrification.”

Onsemi plans to accelerate the introduction of several future generations of silicon carbide by 2030. The US semiconductor manufacturer is also investing in a European SiC semiconductor plant in the Czech Republic. Onsemi’s customers include numerous EV manufacturers (such as Volkswagen, BMW, Hyundai-Kia and Zeekr) and the powertrain supplier Vitesco.

onsemi.com

1 Comment

about „Onsemi presents new generation of SiC semiconductors“
BISWANATH PAL
22.07.2024 um 20:17
Great news, being a EV Professional , I can see the glorious futute of EV segment as well as power Electronics for such as this invention.

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